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NTB25P06, NVB25P06
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 3)
(V GS = 0 V, I D = ? 250 m A)
(Positive Temperature Coefficient)
Zero Gate Voltage Drain Current
(V GS = 0 V, V DS = ? 60 V, T J = 25 ° C)
(V GS = 0 V, V DS = ? 60 V, , T J = 150 ° C)
Gate ? Body Leakage Current (V GS = ± 15 V, V DS = 0 V)
V (BR)DSS
I DSS
I GSS
? 60
?
?
?
?
?
64
?
?
?
?
?
? 10
? 100
± 100
V
mV/ ° C
m A
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(V DS = V GS, I D = ? 250 m A)
(Negative Threshold Temperature Coefficient)
Static Drain ? Source On ? State Resistance
(V GS = ? 10 V, I D = ? 12.5 A)
(V GS = ? 10 V, I D = ? 25 A)
V GS(th)
R DS(on)
? 2.0
?
?
?
? 2.8
6.2
0.065
0.070
? 4.0
?
0.075
0.082
V
mV/ ° C
W
Forward Transconductance
gFS
Mhos
(V DS = ? 10 V, I D = ? 12.5 A)
?
13
?
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
1200
1680
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = ? 25 V, V GS = 0 V,
F = 1.0 MHz)
C oss
C rss
?
?
345
90
480
180
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn ? On Delay Time
t d(on)
?
14
24
ns
Rise Time
Turn ? Off Delay Time
Fall Time
Gate Charge
(V DD = ? 30 V, I D = ? 25 A,
V GS = ? 10 V R G = 9.1 W )
(V DS = ? 48 V, I D = ? 25 A,
V GS = ? 10 V)
t r
t d(off)
t f
Q T
Q 1
Q 2
?
?
?
?
?
?
72
43
190
33
6.5
15
118
68
320
50
?
?
ns
ns
ns
nC
BODY ? DRAIN DIODE RATINGS (Note 3)
Diode Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = ? 25 A, V GS = 0 V)
(I S = ? 25 A, V GS = 0 V, T J = 150 ° C)
(I S = ? 25 A, V GS = 0 V,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
? 1.8
? 1.4
70
50
20
0.2
? 2.5
?
?
?
?
?
V
ns
m C
3. Indicates Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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